17 May 2010 Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding
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Abstract
In this paper we present the integration of an InP-based photodetector with silicon-on-insulator (SOI) waveguides using thermocompression bonding. A BCB prism integrated on top of the light-sensitive area of a planar detector (PD) chip deflects the light from a 4 μm thick SOI waveguide upward into the flip-chip bonded PD. A trench is etched in front of the SOI waveguide to accommodate prisms with apexes up to 7 μm. Using thermocompression bonding between thin gold pads (~500 nm thickness) deposited on both, SOI and photodetector chips an excellent vertical alignment accuracy of ±100 nm can be achieved, limited only by etching and Au-deposition tolerances. A commercial flip-chip bonder provides a lateral alignment accuracy also in the sub-micron range. Together with a previously developed process for integrating lasers and SOA chips using the same technology, fully functional PICs can now be realized on the SOI platform using thermocompression bonding.
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Mikko Harjanne, Markku Kapulainen, Sami Ylinen, Timo Aalto, Jyrki Ollila, Ludwig Mörl, Wolfgang Passenberg, "Hybrid integration of InP photodetectors with SOI waveguides using thermocompression bonding", Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77190S (17 May 2010); doi: 10.1117/12.854403; https://doi.org/10.1117/12.854403
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