18 May 2010 Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film
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Proceedings Volume 7719, Silicon Photonics and Photonic Integrated Circuits II; 77191B (2010); doi: 10.1117/12.854894
Event: SPIE Photonics Europe, 2010, Brussels, Belgium
Abstract
We report on the formation of spatially localized crystals in SiO2-SnO2 thin films fabricated by the sol-gel technique. This material presents an intense absorption band (α≈103cm-1) in the UV region. A continuous wave UV laser operating at 266nm focused through a microscope objective is used as an effective tool to modify locally the matrix containing photorefractive SnO2. The UV micro-Raman spectrometer is used to study the evolution of SnO2 crystals in the thin film. The appearance of the Raman scattering peak at 621cm-1, assigned to the A1g mode of rutile SnO2, confirms the formation of nanocrystals in the focalised UV irradiated zone.
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B. N. Shivakiran Bhaktha, Simone Berneschi, Gualtiero Nunzi Conti, Giancarlo C. Righini, Andrea Chiappini, Alessandro Chiasera, Maurizio Ferrari, Sylvia Turrell, "Spatially localized UV-induced crystallization of SnO2 in photorefractive SiO2-SnO2 thin film", Proc. SPIE 7719, Silicon Photonics and Photonic Integrated Circuits II, 77191B (18 May 2010); doi: 10.1117/12.854894; https://doi.org/10.1117/12.854894
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KEYWORDS
Thin films

Ultraviolet radiation

Crystals

Micro raman spectroscopy

Absorption

Waveguides

Silica

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