Practical Considerations Of Submicron Photolithography

Michele Nuhn; Shi Kay Yao; Todd Johnson; Brad Avrit

doi:10.1117/12.967033

1 January 1987 Practical Considerations Of Submicron Photolithography

Michele Nuhn, Shi Kay Yao, Todd Johnson, Brad Avrit

Proceedings Volume 0772, Optical Microlithography VI; (1987) https://doi.org/10.1117/12.967033
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

In this paper, the image resolution and depth of focus of a 10X 0.42NA i-line wafer stepper is shown. The effects of photoresist processing on these parameters are demonstrated. The processing materials used include i-line resists and contrast enhancement material. Additionally, a machine approach to dealing with the limited depth of focus of this high numerical aperture lens stepper is investigated.

Citation Download Citation

Michele Nuhn, Shi Kay Yao, Todd Johnson, and Brad Avrit "Practical Considerations Of Submicron Photolithography", Proc. SPIE 0772, Optical Microlithography VI, (1 January 1987); https://doi.org/10.1117/12.967033

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