27 April 2010 Traveling wave modeling, simulation, and analysis of quantum-dot mode-locked semiconductor lasers
Author Affiliations +
Abstract
We analyze the dynamics of a mode-locked quantum-dot edge-emitting semiconductor laser consisting of reversely biased saturable absorber and forward biased amplifying sections. To describe spatial non-uniformity of laser parameters, optical fields and carrier distributions we use the traveling wave model, which takes into account carrier exchange processes between wetting layer and quantum dots. A comprehensive parameter study and an optical mode analysis of operation regimes are presented.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mindaugas Radziunas, Mindaugas Radziunas, Andrei G. Vladimirov, Andrei G. Vladimirov, Evgeny A. Viktorov, Evgeny A. Viktorov, } "Traveling wave modeling, simulation, and analysis of quantum-dot mode-locked semiconductor lasers", Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 77200X (27 April 2010); doi: 10.1117/12.853825; https://doi.org/10.1117/12.853825
PROCEEDINGS
8 PAGES


SHARE
Back to Top