27 April 2010 Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching
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Abstract
In this contribution reverse emission state transition of a two-section quantum dot laser at a saturable absorber bias of zero volt (short circuit) is presented where lasing and mode-locking starts first on the energetically higher first excited-state (ES) and then, with increasing gain current, additional lasing and mode-locking on the energetically lower ground-state (GS) takes place. A huge coexistence regime as well as temporal simultaneity of both GS and ES mode-locking is experimentally confirmed. At the onset of two-state mode-locking shorter pulse widths are found for the GS as compared to the ES at the same gain current. A considerable shortening of the ES pulse widths is observed when GS mode-locking starts. These state-resolved emission dynamics are confirmed by time-domain travelling-wave equation modeling. Finally, by electrically shortening the saturable absorber via an external variable resistor, a resistor Self-Electro-Optical Devices (SEED) configuration is exploited and tailored emission state control is achieved.
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Stefan Breuer, Stefan Breuer, Mattia Rossetti, Mattia Rossetti, Wolfgang Elsässer, Wolfgang Elsässer, Lukas Drzewietzki, Lukas Drzewietzki, Paolo Bardella, Paolo Bardella, Ivo Montrosset, Ivo Montrosset, Michel Krakowski, Michel Krakowski, Mark Hopkinson, Mark Hopkinson, } "Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching", Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 772011 (27 April 2010); doi: 10.1117/12.854418; https://doi.org/10.1117/12.854418
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