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27 April 2010 40-GHz GaInNAs-based passively mode-locked laser diode
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We report on the development of monolithic two-section dilute nitride passively mode-locked ridge-waveguide lasers. The dilute nitride material system can cover a wide wavelength range from 1.2 μm to 1.6 μm, while enabling fabrication on low-cost GaAs substrates. The laser structure comprised 3 GaInNAs quantum wells embedded within GaAs waveguide and AlGaAs claddings. To achieve mode-locking at 40 GHz repetition rate the laser chips consisted of a 950 μm long gain section and a 90 μm long reverse biased absorber section with a ridge width of 3.5 μm. The mode-locked laser output exceeded 3 mW per as-cleaved facet with 80 mA current in the gain region and a reverse voltage of 3.8 V applied to the saturable absorber. The corresponding pulse width was 3.4 ps. To study the effect of increasing the number of N-related recombination traps present in the proximity of the quantum wells, we have compared the performance of lasers employing GaAsN or GaAs as quantum well barriers. Time-resolved photoluminescence measurements revealed that the material comprising GaAsN barriers exhibited a photoluminescence lifetime of 12 ps with a reverse bias of 5 V. For similar reverse bias, the photoluminescence lifetime for material comprising GaAs barriers was 108 ps.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Haring, J. Thoma, T. J. Ochalski, S. P. Hegarty, J. Puustinen, J. Viheriälä, G. Huyet, and M. Guina "40-GHz GaInNAs-based passively mode-locked laser diode", Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 772017 (27 April 2010);


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