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27 April 2010 Coherence collapse in monolithic quantum-dash-based passive mode-locked lasers
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Monolithic semiconductor mode-locked lasers (MLLs) are rising considerable interest for such diverse applications as very high speed optical time division multiplexing sources (40-160 GHz), all-optical signal processing, and low noise sampling for signal monitoring of optical networks. In a large number of these applications, MLLs may be subjected to optical feedback generated by unwanted reflections in optical systems which may greatly degrade laser performance. A number of experimental studies have been performed to evaluate the sensitivity of MLLs to optical feedback showing an increase of phase noise [1-5]. Quantum-dash (Qdash) based Fabry Perot lasers have been shown to exhibit an improved tolerance to feedback [6]. In this work, optical feedback tolerance is investigated for a monolithic quantum-dash-based passive mode-locked laser emitting at 1.58 μm. The two-section device generates ~5 ps pulses at a repetition rate of 17 GHz. The onset of the coherence collapse (CC) regime is experimentally determined by measuring the broadening of the longitudinal modes in the optical spectrum. Depending on bias condition, the CC regime is reached for values of feedback ranging from -35 dB to -29 dB at which emitted pulses were slighly broadened. The radio-frequency (RF) linewidth was simultaneously assessed and a drastic reduction of the RF linewidth with increasing feedback strength is evidenced. This indicates a reduction of the phase noise, thus implying a low "high frequency" timing jitter. We in particular observed an RF linewidth narrowing down to a value of less than 1 kHz under optical feedback.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
K. Merghem, R. Rosales, S. Azouigui, A. Martinez, F. Van Dijk, G. Aubin, and A. Ramdane "Coherence collapse in monolithic quantum-dash-based passive mode-locked lasers", Proc. SPIE 7720, Semiconductor Lasers and Laser Dynamics IV, 772018 (27 April 2010);


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