19 May 2010 Saturable absorbers based on semiconductor A3B5 nanostructures
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Abstract
Semiconductor nanostructures (multiple quantum wells type) design and manufacturing are developed for ternary and quaternary A3B5 compounds. Characterization of SA by subpicosecond resolution pump-probe technique was made for SA samples for Yb3+:KY(WO4)2 and Nd3+:KGd(WO4)2 lasers. Recovery kinetics contains the "fast" (hundreds fs) and "slow" (hundreds ps) parts. Method of recovery time shortening based on ultra-violet laser irradiation of SA was investigated; it showed the possibility to reduce the "slow" relaxation time by an order of magnitude. Another approach based on application of nanostructured barriers between quantum wells proved also quite suitable for recovery time shortening. A special method of a reflecting interferometer for complete amplitude and phase characterization of laser mirrors was developed and tested. SA mirrors operating in Yb3+:KY(WO4)2 and Nd3+:KGd(WO4)2 lasers gave promising results for peak power and pulse duration.
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Nataliya N. Rubtsova, Nataliya N. Rubtsova, Sergey A. Kochubei, Sergey A. Kochubei, Alexander A. Kovalyov, Alexander A. Kovalyov, Valery V. Preobrazhenskii, Valery V. Preobrazhenskii, Mikhael A. Putyato, Mikhael A. Putyato, Oleg P. Pchelyakov, Oleg P. Pchelyakov, Boris Removich Semyagin, Boris Removich Semyagin, Timur S. Shamirzaev, Timur S. Shamirzaev, Nikolay V. Kuleshov, Nikolay V. Kuleshov, Viktor E. Kisel, Viktor E. Kisel, Sergey V. Kurilchik, Sergey V. Kurilchik, } "Saturable absorbers based on semiconductor A3B5 nanostructures", Proc. SPIE 7721, Solid State Lasers and Amplifiers IV, and High-Power Lasers, 77210G (19 May 2010); doi: 10.1117/12.854105; https://doi.org/10.1117/12.854105
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