PV metamaterial based on nanostructured Si

Zbigniew T. Kuznicki; Patrick Meyrueis

doi:10.1117/12.856306

18 May 2010 PV metamaterial based on nanostructured Si

Zbigniew T. Kuznicki, Patrick Meyrueis

Proceedings Volume 7725, Photonics for Solar Energy Systems III; 77250J (2010) https://doi.org/10.1117/12.856306
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

There are several ways to nanostructure Si. Some of them, e.g. nanoscale Si-layerd systems buried within the n+ layer of a crystalline Si can provide an initial material with unpredicted optoelectronic behavior. Such a transformation leads to a PV Si metamaterial, whose optoelectronic properties arise from qualitatively new response functions that are (i) not observed in the constituent materials and (ii) result from the inclusion of artificially fabricated, intrinsic and extrinsic, low-dimensional components. We show that an extremely strong c-Si:P absorptance, determined by the free-carrier population, is larger than can result from conventional conversion. The density of the population confined within the surface layer delimited by the nanoscale Si-layerd system increases by injection of additional carriers from a nanostratum (transformed up to a Si-metamaterial) lying just behind the top c-Si:P-layer.

Citation Download Citation

Zbigniew T. Kuznicki and Patrick Meyrueis "PV metamaterial based on nanostructured Si", Proc. SPIE 7725, Photonics for Solar Energy Systems III, 77250J (18 May 2010); https://doi.org/10.1117/12.856306

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