18 May 2010 PV metamaterial based on nanostructured Si
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Abstract
There are several ways to nanostructure Si. Some of them, e.g. nanoscale Si-layerd systems buried within the n+ layer of a crystalline Si can provide an initial material with unpredicted optoelectronic behavior. Such a transformation leads to a PV Si metamaterial, whose optoelectronic properties arise from qualitatively new response functions that are (i) not observed in the constituent materials and (ii) result from the inclusion of artificially fabricated, intrinsic and extrinsic, low-dimensional components. We show that an extremely strong c-Si:P absorptance, determined by the free-carrier population, is larger than can result from conventional conversion. The density of the population confined within the surface layer delimited by the nanoscale Si-layerd system increases by injection of additional carriers from a nanostratum (transformed up to a Si-metamaterial) lying just behind the top c-Si:P-layer.
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Zbigniew T. Kuznicki, Zbigniew T. Kuznicki, Patrick Meyrueis, Patrick Meyrueis, } "PV metamaterial based on nanostructured Si", Proc. SPIE 7725, Photonics for Solar Energy Systems III, 77250J (18 May 2010); doi: 10.1117/12.856306; https://doi.org/10.1117/12.856306
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