18 May 2010 Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P
Author Affiliations +
Abstract
A complete model for the heavily doped and/or highly excited Si:P dielectric function is presented in the limit of the free-carrier gas approach. New interesting features of Si:P dielectric functions are presented and discussed. The influence of dopants and free-carriers is taken into account independently and their common features usually assumed in the literature, are analysed. The influence of Drude damping time on the optical response of heavily doped Si:P is studied. All results are compared with experimental data.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Basta, M. Basta, Z. T. Kuznicki, Z. T. Kuznicki, } "Dielectric functions and optical parameters of heavily doped and/or highly excited Si:P", Proc. SPIE 7725, Photonics for Solar Energy Systems III, 77251J (18 May 2010); doi: 10.1117/12.856308; https://doi.org/10.1117/12.856308
PROCEEDINGS
9 PAGES


SHARE
Back to Top