AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range

P. E. Malinowski; J.-Y. Duboz; J. John; C. Sturdevant; J. Das; J. Derluyn; M. Germain; P. De Moor; K. Minoglou; F. Semond; E. Frayssinet; J.-F. Hochedez; B. Giordanengo; C. Van Hoof; R. Mertens

doi:10.1117/12.853782

13 May 2010 AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range

P. E. Malinowski, J.-Y. Duboz, J. John, C. Sturdevant, J. Das, J. Derluyn, M. Germain, P. De Moor, K. Minoglou, F. Semond, E. Frayssinet, J.-F. Hochedez, B. Giordanengo, C. Van Hoof, R. Mertens

Author Affiliations +

Proceedings Volume 7726, Optical Sensing and Detection; 772617 (2010) https://doi.org/10.1117/12.853782
Event: SPIE Photonics Europe, 2010, Brussels, Belgium

Abstract

We report on the fabrication and characterization of solar blind Metal-Semiconductor-Metal (MSM) based photodetectors for use in the extreme ultraviolet (EUV) wavelength range. The devices were fabricated in the AlGaN-on- Si material system, with Aluminum Gallium Nitride (AlGaN) epitaxial layers grown on Si(111) by means of Molecular Beam Epitaxy. The detectors' IV characteristics and photoresponse were measured between 200 and 400 nm. Spectral responsivity was calculated for comparison with the state-of-the-art ultraviolet photodetectors. It reaches the order of 0.1 A/W at the cut-off wavelength of 360 nm, for devices with Au fingers of 3 μm width and spacing of 3 μm. The rejection ratio of visible radiation (400 nm) was more than 3 orders of magnitude. In the additional post-processing step, the Si substrate was removed locally under the active area of the MSM photodetectors using SF₆-based Reactive Ion Etching (RIE). In such scheme, the backside illumination is allowed and there is no shadowing of the active layer by the metal electrodes, which is advantageous for the EUV sensitivity. Completed devices were assembled and wire-bonded in customized TO-8 packages with an opening. The sensitivity at EUV was verified at the wavelengths of 30.4 and 58.4 nm using a He-based beamline. AlGaN photodetectors are a promising alternative for highly demanding applications such as space science or modern EUV lithography. The backside illumination approach is suited in particular for large, 2D focal plane arrays.

Citation Download Citation

P. E. Malinowski, J.-Y. Duboz, J. John, C. Sturdevant, J. Das, J. Derluyn, M. Germain, P. De Moor, K. Minoglou, F. Semond, E. Frayssinet, J.-F. Hochedez, B. Giordanengo, C. Van Hoof, and R. Mertens "AlGaN-on-Si backside illuminated photodetectors for the extreme ultraviolet (EUV) range", Proc. SPIE 7726, Optical Sensing and Detection, 772617 (13 May 2010); https://doi.org/10.1117/12.853782

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available