We present the results of experimental studies of physical properties of the detection process of GaAs Schottky diodes
for terahertz frequency radiation. The development of technology in the THz frequency band has a rapid progress
recently. Considered as an extension of the microwave and millimeter wave bands, the THz frequency offers greater
communication bandwidth than is available at microwave frequencies. The Schottky barrier contact has an important role
in the operation of many GaAs devices. GaAs Schottky diodes have been the primary nonlinear device used in
millimeter and sub millimeter wave detectors and receivers. GaAs Schottky diodes are especially interesting due to their
high mobility transport characteristics, which allows for a large reduction of the resistance-capacitance (RC) time
constant and thermal noise.
In This work are investigated the electrical and photoelectric properties of GaAs Schottky diodes. Samples were obtained
by deposition of different metals (Au, Ni, Pt, Pd, Fe, In, Ga, Al) on semiconductor. For fabrication metal-semiconductor
(MS) structures is used original method of metal electrodepositing. In this method electrochemical etching of
semiconductor surface occurs just before deposition of metal from the solution, which contains etching material and
metal ions together. For that, semiconductor surface cleaning processes and metal deposition carries out in the same
technological process. In the experiments as the electrolyte was used aqueous solution of chlorides. Metal deposition was
carried out at room temperature.