Paper
3 June 2010 A novel Monte Carlo simulation code for linewidth measurement in critical dimension scanning electron microscopy
Alexander Koschik, Mauro Ciappa, Stephan Holzer, Maurizio Dapor, Wolfgang Fichtner
Author Affiliations +
Proceedings Volume 7729, Scanning Microscopy 2010; 77290X (2010) https://doi.org/10.1117/12.853804
Event: Scanning Microscopy 2010, 2010, Monterey, California, United States
Abstract
Besides the use of the most sophisticated equipment, accurate nanometrology for the most advanced CMOS processes requires that the physics of image formation in scanning electron microscopy (SEM) being modeled to extract critical dimensions. In this paper, a novel Monte Carlo simulation code based on the energy straggling principle is presented, which includes original physical models for electron scattering, the use of a standard Monte Carlo code for tracking and scoring, and the coupling with a numerical device simulator to calculate charging effects.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander Koschik, Mauro Ciappa, Stephan Holzer, Maurizio Dapor, and Wolfgang Fichtner "A novel Monte Carlo simulation code for linewidth measurement in critical dimension scanning electron microscopy", Proc. SPIE 7729, Scanning Microscopy 2010, 77290X (3 June 2010); https://doi.org/10.1117/12.853804
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Cited by 18 scholarly publications.
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KEYWORDS
Silicon

Line scan image sensors

Monte Carlo methods

Polymethylmethacrylate

Scattering

Physics

Scanning electron microscopy

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