Paper
30 June 1987 Versatile X-Ray Mask Fabrication Techniques
Katsumi Suzuki
Author Affiliations +
Abstract
A novel X-ray mask fabrication process, which is as simple as that used for conventional photomasks, has been developed. Several step and repeat X-ray lithography masks with SIN, membranes, which are stretched over rectangular rigid Si-frames, are fabricated from the same large wafer. Transparent window formations fot several tens of X-ray mask substrates are carried out simultaneously, by etching the (100) oriented Si wafers in KOH solution using no protection. V-grooves with (111) plane side walls, for dividing individual wafers into individual X-ray mask substrates, are simultaneously formed by the unisotropic etching. X-ray absorber patterns are fabricated on the SiNv membrane with rf-sputtered tungsten, by the subtractive method. Employing the present method, SIN, mask blanks, with less than 0.3μm warpage across a 26mm square window, have been fabricat&I with several tens of times higher throughput than can be achieved by the conventional process.
© (1987) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Katsumi Suzuki "Versatile X-Ray Mask Fabrication Techniques", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940349
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CITATIONS
Cited by 3 scholarly publications and 1 patent.
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KEYWORDS
Photomasks

X-rays

Tungsten

Semiconducting wafers

Mask making

Etching

Silicon

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