16 July 2010 Characterization of a ΣΔ-based CMOS monolithic detector
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Abstract
This paper is a progress report of the design and characterization of a monolithic CMOS detector with an on-chip ΣΔ ADC. A brief description of the design and operation is given. Backside processing steps to allow for backside illumination are summarized. Current characterization results are given for pre- and post-thinned detectors. Characterization results include measurements of: gain photodiode capacitance, dark current, linearity, well depth, relative quantum efficiency, and read noise. Lastly, a detector re-design is described; and initial measurements of its photodiode capacitance and read noise are presented.
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Brandon J. Hanold, Donald F. Figer, Brian Ashe, Thomas Montagliano, Donald J. Stauffer, Zeljko Ignjatovic, Danijel Maricic, Shouleh Nikzad, Todd J. Jones, "Characterization of a ΣΔ-based CMOS monolithic detector", Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 77420A (16 July 2010); doi: 10.1117/12.857176; https://doi.org/10.1117/12.857176
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