Abstract
This paper is a continuation of past papers written on fundamental performance differences of scientific CMOS and
CCD imagers. New characterization results presented below include: 1). a new 1536 × 1536 × 8μm 5TPPD pixel CMOS
imager, 2). buried channel MOSFETs for random telegraph noise (RTN) and threshold reduction, 3) sub-electron noise
pixels, 4) 'MIM pixel' for pixel sensitivity (V/e-) control, 5) '5TPPD RING pixel' for large pixel, high-speed charge
transfer applications, 6) pixel-to-pixel blooming control, 7) buried channel photo gate pixels and CMOSCCDs, 8)
substrate bias for deep depletion CMOS imagers, 9) CMOS dark spikes and dark current issues and 10) high energy
radiation damage test data. Discussions are also given to a 1024 × 1024 × 16 um 5TPPD pixel imager currently in
fabrication and new stitched CMOS imagers that are in the design phase including 4k × 4k × 10 μm and 10k × 10k × 10
um imager formats.
