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13 July 2010 Characterization and absolute QE measurements of delta-doped N-channel and P-channel CCDs
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Abstract
In this paper we present the methodology for making absolute quantum efficiency (QE) measurements from the vacuum ultraviolet (VUV) through the near infrared (NIR) on delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, and good camera vacuum to prevent chip condensation, and more stringent handling requirements. The system used for these measurements was originally designed for deep UV characterization of CCDs for the WF/PC instrument on Hubble and later for Cassini CCDs.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Blake C. Jacquot, Steve P. Monacos, Todd J. Jones, Jordana Blacksberg, Michael E. Hoenk, and Shouleh Nikzad "Characterization and absolute QE measurements of delta-doped N-channel and P-channel CCDs", Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 77420I (13 July 2010); https://doi.org/10.1117/12.857694
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