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19 July 2010 Development of high-speed, low-noise NIR HgCdTe avalanche photodiode arrays for adaptive optics and interferometry
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Abstract
The most promising way to overcome the CMOS noise barrier of infrared AO sensors is the amplification of the photoelectron signal directly at the point of absorption inside the infrared pixel by means of the avalanche gain. HgCdTe eAPD arrays with cut off wavelengths of λc ~2.64 μm produced by SELEX-Galileo have been evaluated at ESO. The arrays were hybridized to an existing non-optimized ROIC developed for laser gated imaging which has a format of 320×256 pixels and four parallel video outputs. The avalanche gain makes it possible to reduce the read noise to < 7 e rms. The dark current requirements of IR wavefront sensing are also met.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gert Finger, Ian Baker, Reinhold Dorn, Siegfried Eschbaumer, Derek Ives, Leander Mehrgan, Manfred Meyer, and Jörg Stegmeier "Development of high-speed, low-noise NIR HgCdTe avalanche photodiode arrays for adaptive optics and interferometry", Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 77421K (19 July 2010); https://doi.org/10.1117/12.857316
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