19 July 2010 Radiation hardness studies of InGaAs photodiodes at 30, 52, & 98 MeV and fluences to 1010 protons/cm2
Author Affiliations +
Abstract
We report the effects of radiation damage due to ionizing protons on InGaAs photodiodes. The photodiodes were irradiated at energies of 30, 52, and 98 MeV and fluences up to 1010 protons/cm2 in experiments at the Indiana University Cyclotron Facility. The photodiodes were tested for changes in their dark current, their relative responsivity as a function of wavelength from 1000 - 1600 nm, and their absolute responsivity in narrow bandpasses spread throughout the same wavelength region. The measurements were all made with detectors traceable to NIST standards. At these exposures and energies, the most significant effects are seen in the dark current levels.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Brian J. Baptista, Stuart L. Mufson, "Radiation hardness studies of InGaAs photodiodes at 30, 52, & 98 MeV and fluences to 1010 protons/cm2", Proc. SPIE 7742, High Energy, Optical, and Infrared Detectors for Astronomy IV, 774225 (19 July 2010); doi: 10.1117/12.856481; https://doi.org/10.1117/12.856481
PROCEEDINGS
11 PAGES


SHARE
Back to Top