Band structures and density of state of Ge/GeSiSn type-I quantum wells

W. J. Fan

doi:10.1117/12.861346

19 May 2010 Band structures and density of state of Ge/GeSiSn type-I quantum wells

W. J. Fan

Proceedings Volume 7743, Southeast Asian International Advances in Micro/Nanotechnology; 774309 (2010) https://doi.org/10.1117/12.861346
Event: Southeast Asian International Advances in Micro/Nano-technology, 2010, Bangkok, Thailand

Abstract

The band structures and density of state of tensile strained Ge/GeSiSn QWs with different Sn composition are investigated by using 6-band k.p method. The band lineups of Ge/GeSiSn are given. The hole energy dispersion curves and density of state are calculated. The results are helpful for Si photonics device design.

Citation Download Citation

W. J. Fan "Band structures and density of state of Ge/GeSiSn type-I quantum wells", Proc. SPIE 7743, Southeast Asian International Advances in Micro/Nanotechnology, 774309 (19 May 2010); https://doi.org/10.1117/12.861346

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