14 December 2010 Spectral ellipsometry based on a channeled spectrum detection to measure the thickness of a thin film
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Proceedings Volume 7746, 17th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics; 77461H (2010) https://doi.org/10.1117/12.877996
Event: 17th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 2010, Liptovsky Jan, Slovakia
Abstract
We describe a new concept of spectral ellipsometry based on a channeled spectrum detection in a polarimetric configuration with a birefringent crystal to measure the thickness of a thin film. We use a two-step technique to retrieve the ellipsometric phase of a thin-film structure from the recorded channeled spectra. In the first step, the phase difference between p- and s-polarized waves propagating in the birefringent crystal alone is retrieved. In the second step, the additional phase change that the polarized waves undergo on reflection from the thin-film structure is retrieved. Moreover, in the same polarimetric configuration, the ratio between the reflectances of both polarization states is determined. The new concept of ellipsometry is used in measuring the data for a SiO2 thin film on a Si substrate in a range from 550 to 900 nm and in determining the thin-film thickness provided that the optical parameters of the structure are known. The thicknesses of different samples obtained are compared with those resulting from previous interferometric and reflectometric measurements, and good agreement is confirmed.
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P. Hlubina, D. Ciprian, J. Luňáček, "Spectral ellipsometry based on a channeled spectrum detection to measure the thickness of a thin film", Proc. SPIE 7746, 17th Slovak-Czech-Polish Optical Conference on Wave and Quantum Aspects of Contemporary Optics, 77461H (14 December 2010); doi: 10.1117/12.877996; https://doi.org/10.1117/12.877996
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