17 January 2011 Fluorescence from Pb1-xCdxSe polycrystalline films exited by non-monochromatic light at λmax ~ 0.9 μm
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Proceedings Volume 7747, 16th International School on Quantum Electronics: Laser Physics and Applications; 774707 (2011) https://doi.org/10.1117/12.882786
Event: XVI International School on Quantum Electronics: Laser Physics and Applications, 2010, Nessebar, Bulgaria
Abstract
μInterest to the narrow band gap semiconductors for example Pb1-xCdxSe is connected with problem of creation of new sources of IR radiation. Possibility of control of the properties of polycrystalline films of the lead chemical compounds by luminescent and Raman methods is considered.
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A. Baranov, S. Cherevkov, V. Polischuk, D. Slavov, L. Petrov, G. Todorov, "Fluorescence from Pb1-xCdxSe polycrystalline films exited by non-monochromatic light at λmax ~ 0.9 μm", Proc. SPIE 7747, 16th International School on Quantum Electronics: Laser Physics and Applications, 774707 (17 January 2011); doi: 10.1117/12.882786; https://doi.org/10.1117/12.882786
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