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25 May 2010 Perspectives of CMOS technology and future requirements
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Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774802 (2010) https://doi.org/10.1117/12.864085
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan
Abstract
In Si-LSI industry, the variation of device characteristics has been one of the issues because of 10-year-lifetime LSI and high-yield mass production, and it has been continuously developing the several methods to mitigate and straighten out it. Currently, the local and random variation has been still the critical issue, compared to the global variation and the systematic one, because devices are so scaled down and the packing-density of devices is very high in LSI's. In FEOL, this variation leads to the performance degradation of SRAM, which consists of six transistors in small cells and works as the main memory on chip. This is because the local and random variation can cause the mismatch of pair transistors. In BEOL, the variation causes the degradation of interconnect performance and reliability, and leads to the performance degradation of many circuits. It is suggested that the main mechanism in that variation can be line edge roughness (LER) and random dopant fluctuation (RDF). Both LER and RDF are related to a lot of process technologies, such as lithography, etching, annealing and so on. In order to analyze the relationship between this variation and process technology and to reduce the variation, we should develop the new analysis methods for variations in <50nm CMOS devices and the new control methods. This paper presents the current status of variations and variation mechanisms, and discusses future requirements for the advanced CMOS-LSI.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tohru Mogami "Perspectives of CMOS technology and future requirements", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774802 (25 May 2010); https://doi.org/10.1117/12.864085
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