Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance

Takashi Kamo; Hajime Aoyama; Yukiyasu Arisawa; Kazuo Tawarayama; Toshihiko Tanaka; Osamu Suga

doi:10.1117/12.867774

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27 May 2010 Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Kazuo Tawarayama, Toshihiko Tanaka, Osamu Suga

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Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774805 (2010) https://doi.org/10.1117/12.867774
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan

Abstract

When a thinner absorber mask is applied to EUVL for ULSI chip production, it becomes essential to introduce EUV light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. Thin absorber mask with light-shield border of etched multilayer adds to the process flexibility of a mask with high CD accuracy. In this paper, we demonstrate the lithographic performance of a thin absorber mask with light-shield border of etched multilayer using a full-field exposure tool (EUV1) operating under the current working condition of EUV source.

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Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Kazuo Tawarayama, Toshihiko Tanaka, and Osamu Suga "Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774805 (27 May 2010); https://doi.org/10.1117/12.867774

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