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27 May 2010 Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance
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Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774805 (2010) https://doi.org/10.1117/12.867774
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan
Abstract
When a thinner absorber mask is applied to EUVL for ULSI chip production, it becomes essential to introduce EUV light-shield border in order to suppress the leakage of EUV light from the adjacent exposure shots. Thin absorber mask with light-shield border of etched multilayer adds to the process flexibility of a mask with high CD accuracy. In this paper, we demonstrate the lithographic performance of a thin absorber mask with light-shield border of etched multilayer using a full-field exposure tool (EUV1) operating under the current working condition of EUV source.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Kazuo Tawarayama, Toshihiko Tanaka, and Osamu Suga "Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774805 (27 May 2010); https://doi.org/10.1117/12.867774
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