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26 May 2010 Inspecting EUV mask blanks with a 193-nm system
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Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774808 (2010)
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan
Data and simulation results characterizing the capability of a DUV system to inspect EUV mask blanks and substrates are reported. Phase defects and particles on multilayer (ML) surfaces, ARC-coated absorber, and substrate material are considered. Phase defects on a quartz substrate surface are shown. The principle of phase detection is described. Results demonstrating the Teron 600's readiness for meeting 32nm hp requirements for bump / pit phase defect detection are shown. Simulations show that the 22-nm node requirement for phase defect detection should be met, assuming a reduction in the multilayer roughness. Preliminary data on the sensitivity of SiO2 sphere detection on ML and quartz are reported. Simulation results show relative sensitivities for detecting SiO2 spheres of different diameters on various EUV materials.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joshua Glasser, Stan Stokowski, and Gregg Inderhees "Inspecting EUV mask blanks with a 193-nm system", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774808 (26 May 2010);


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