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26 May 2010 Performance and stability of mask process correction for EBM-7000
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Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774814 (2010) https://doi.org/10.1117/12.867969
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan
Abstract
In order to support complex optical masks today and EUV masks in the near future, it is critical to correct mask patterning errors with a magnitude of up to 20nm over a range of 2000nm at mask scale caused by short range mask process proximity effects. A new mask process correction technology, MPC+, has been developed to achieve the target requirements for the next generation node. In this paper, the accuracy and throughput performance of MPC+ technology is evaluated using the most advanced mask writing tool, the EBM-70001), and high quality mask metrology . The accuracy of MPC+ is achieved by using a new comprehensive mask model. The results of through-pitch and through-linewidth linearity curves and error statistics for multiple pattern layouts (including both 1D and 2D patterns) are demonstrated and show post-correction accuracy of 2.34nm 3σ for through-pitch/through-linewidth linearity. Implementing faster mask model simulation and more efficient correction recipes; full mask area (100cm2) processing run time is less than 7 hours for 32nm half-pitch technology node. From these results, it can be concluded that MPC+ with its higher precision and speed is a practical technology for the 32nm node and future technology generations, including EUV, when used with advance mask writing processes like the EBM-7000.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasuko Saito, George Chen, Jen-Shiang Wang, Shufeng Bai, Rafael Howell, Jiangwei Li, Jun Tao, Doug VanDenBroeke, Jim Wiley, Tadahiro Takigawa, Takayuki Ohnishi, Takashi Kamikubo, Shigehiro Hara, Hirohito Anze, Yoshiaki Hattori, and Shuichi Tamamushi "Performance and stability of mask process correction for EBM-7000", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774814 (26 May 2010); https://doi.org/10.1117/12.867969
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