26 May 2010 W-CMOS blanking device for projection multibeam lithography
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Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774815 (2010) https://doi.org/10.1117/12.865478
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan
Abstract
As the designs of future mask nodes become more and more complex the corresponding pattern writing times will rise significantly when using single beam writing tools. Projection multi-beam lithography [1] is one promising technology to enhance the throughput compared to state of the art VSB pattern generators. One key component of the projection multi-beam tool is an Aperture Plate System (APS) to form and switch thousands of individual beamlets. In our present setup a highly parallel beam is divided into 43,008 individual beamlets by a Siaperture- plate. These micrometer sized beams pass through larger openings in a blanking-plate and are individually switched on and off by applying a voltage to blanking-electrodes which are placed around the blanking-plate openings. A charged particle 200x reduction optics demagnifies the beamlet array to the substrate. The switched off beams are filtered out in the projection optics so that only the beams which are unaffected by the blanking-plate are projected to the substrate with 200x reduction. The blanking-plate is basically a CMOS device for handling the writing data. In our work the blanking-electrodes are fabricated using CMOS compatible add on processes like SiO2-etching or metal deposition and structuring. A new approach is the implementation of buried tungsten electrodes for beam blanking.
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Michael Jurisch, Mathias Irmscher, Florian Letzkus, Stefan Eder-Kapl, Christof Klein, Hans Loeschner, Walter Piller, Elmar Platzgummer, "W-CMOS blanking device for projection multibeam lithography", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774815 (26 May 2010); doi: 10.1117/12.865478; https://doi.org/10.1117/12.865478
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