The large contour data generation from divided image of photomask pattern of 32 nm and beyond

Tsutomu Murakawa; Yoshiaki Ogiso; Toshimichi Iwai; Jun Matsumoto; Takayuki Nakamura

doi:10.1117/12.866056

26 May 2010 The large contour data generation from divided image of photomask pattern of 32 nm and beyond

Tsutomu Murakawa, Yoshiaki Ogiso, Toshimichi Iwai, Jun Matsumoto, Takayuki Nakamura

Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 77481A (2010) https://doi.org/10.1117/12.866056
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan

Abstract

The application of Mask CD-SEM for process management of photomask using two dimensional measurements as photomask patterns become smaller and more complex, [1]. Also, WPI technology application using an optical Mask inspection tool simulates wafer plane images using photomask images [2]. In order to simulate the MEEF influence for aggressive OPC and High-end photomask patterns in 32nm node and beyond, a requirement exists for wide Field of View (FOV) GDS data and tone information generated from high precision SEM images. In light of these requirements, we developed a GDS data extraction algorithm with sub-nanometer accuracy using wide FOV images, for example, greater than 10um square. As a result, we over come the difficulty of generating large contour data without the distortion that is normally associated with acquired SEM images. Also, it will be shown that the evaluation result can be effective for 32 nm applications and beyond using Mask CD-SEM E3620 manufactured by Advantest. On the other hand, we investigate the application example of the wide FOV GDS data. In order to easily compare the acquired GDS data with design data, we explain the separate algorithm with three layer structures for Tri-tone (Ternary) photomask pattern, consisting of an outer pattern and another pattern.

Citation Download Citation

Tsutomu Murakawa, Yoshiaki Ogiso, Toshimichi Iwai, Jun Matsumoto, and Takayuki Nakamura "The large contour data generation from divided image of photomask pattern of 32 nm and beyond", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77481A (26 May 2010); https://doi.org/10.1117/12.866056

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KEYWORDS

Scanning electron microscopy

Photomasks

Optical proximity correction

Semiconducting wafers

Data acquisition

Data conversion

Data modeling

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