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26 May 2010 CMP dummy pattern based on VSB writer load
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Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 77481M (2010)
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan
The load of VSB-EB mask writers has significantly increased since particularly RET/OPC and CMP dummy pattern generation technologies were widely adopted into designs at advanced nodes, with the result that the volume of mask data patterns was increased exponentially. In order to reduce the load of VSB mask writer, we've focused on CMP dummy patterns and developed a method of reducing CMP dummy pattern, which can smartly write CMP dummy patterns without not only deteriorating the CMP effects by them and also increasing the total number of the mask writer's shot count. To that end, we are aiming to establish a VSB-mask-writer-friendly CMP dummy pattern generation flow with CMP simulator developers by providing a mask writer parameter for them. This paper shows the first experimental results of our mask writer's load reduction work.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wakahiko Sakata, Isaku Osawa, Shogo Narukawa, Tadahiko Takikawa, and Hiroshi Mohri "CMP dummy pattern based on VSB writer load", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77481M (26 May 2010); doi: 10.1117/12.864104;

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