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26 May 2010 The optical CD metrology for EUV mask
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Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 77481X (2010) https://doi.org/10.1117/12.868293
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan
Abstract
The most important factor in extreme ultra violet (EUV) mask process is thickness variations which caused by resist dark loss, absorber etching and capping layer durability of cleaning chemical at each layer. For example if multilayer (M/L) is damaged due to 2.5nm capping layer loss after cleaning, it means it is impossible to get sufficient reflectance to make proper EUV mask.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jin-Back Park, Kyoung-Yoon Bang, Dong-Gun Lee, Hae-Young Jeong, Seung-Soo Kim, and Han-Ku Cho "The optical CD metrology for EUV mask", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 77481X (26 May 2010); doi: 10.1117/12.868293; https://doi.org/10.1117/12.868293
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