27 May 2010 Effective-exposure-dose monitoring technique in EUV lithography
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Proceedings Volume 7748, Photomask and Next-Generation Lithography Mask Technology XVII; 774824 (2010) https://doi.org/10.1117/12.868924
Event: Photomask and NGL Mask Technology XVII, 2010, Yokohama, Japan
Abstract
EUV lithography is a promising candidate for 2x-nm-node device manufacturing. Management of effective dose is important to meet the stringent requirements for CD control. Test pattern for a lithography tool evaluation, the effective dose monitor (EDM), shows good performance in the dose monitoring for optical lithography, for example, KrF lithography. The EDM can measure an exposure dose with no influence on defocus, because the image of an EDM pattern is produced by the zero-th-order ray in diffraction only. When this technique is applied to EUV lithography, the mask shadowing effect should be taken into consideration. We calculated the shadowing effect as a function of field position and applied it to correction of the experimental dose variation. We estimated the dose variation in EUV exposure field to be 2.55 % when corrected by the shadowing effect. We showed that the EDM is useful for EUV lithography.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yumi Nakajima, Yumi Nakajima, Kentaro Kasa, Kentaro Kasa, Takashi Sato, Takashi Sato, Masafumi Asano, Masafumi Asano, Suigen Kyoh, Suigen Kyoh, Hiroyuki Mizuno, Hiroyuki Mizuno, } "Effective-exposure-dose monitoring technique in EUV lithography", Proc. SPIE 7748, Photomask and Next-Generation Lithography Mask Technology XVII, 774824 (27 May 2010); doi: 10.1117/12.868924; https://doi.org/10.1117/12.868924
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