21 July 2010 The simulation of growth thermodynamics in the synthesis of GaN1-xPx alloys
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Proceedings Volume 7749, 2010 International Conference on Display and Photonics; 774906 (2010) https://doi.org/10.1117/12.869697
Event: 2010 International Conference on Display and Photonics, 2010, Nanjing, China
Abstract
In this paper, thermodynamics method was used to calculate the growth of GaN1-xPx ternary alloys on (0001) GaN/sapphire substrates and the solubility of phosphorus in GaN by using the Gibbs free energy theory was calculated. The calculated results show that great deviation from linearity between the input mole ratio R and the equilibrium partial pressures, and the content of P in GaN varies with the growth temperature and the boundary of the spinodal isotherm shifts from x=0.06 to x=0.25 at the growth temperature of 1200K as the strain factor increases from 0 to 1, indicating that the strain in the GaN1-xPx layers can suppress the phase separation. Meanwhile, with the increase of the effective elastic parameters of GaN and GaP, the available maximum P content also increases slightly at the growth temperature.
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K. X. Zhang, K. X. Zhang, D. W. Huang, D. W. Huang, H. Y. Xie, H. Y. Xie, Y. Xu, Y. Xu, J. F. Gong, J. F. Gong, W. H. Zhu, W. H. Zhu, } "The simulation of growth thermodynamics in the synthesis of GaN1-xPx alloys", Proc. SPIE 7749, 2010 International Conference on Display and Photonics, 774906 (21 July 2010); doi: 10.1117/12.869697; https://doi.org/10.1117/12.869697
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