22 September 2010 Full-wafer thermal imaging in ultrahigh epitaxy tools
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Proceedings Volume 7750, Photonics North 2010; 77500O (2010) https://doi.org/10.1117/12.872967
Event: Photonics North 2010, 2010, Niagara Falls, Canada
Abstract
The surface temperature distribution of a GaAs wafer, heated under vacuum, has been measured using a digital camera. A method is proposed to remove parasitic signals from the image. The accuracy of the thermal image is validated by comparing the results with a separate measurement from absorption band-edge spectroscopy (ABES). The thermal imaging data are observed to be within the experimental error from the ABES technique for the entire surface of the wafer. We observe a radial temperature profile with a center-to-edge difference that varies as a function of the central temperature. A difference of 25 °C is observed for a central temperature of 565 °C. This difference increases with the wafer temperature, confirming that it is due to a net heat flux escaping the wafer by its edge, which is in contact with a graphite holder. Based on these results, a solution is proposed in which the graphite wafer holder is replaced by a ceramic version.
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Bernard Paquette, André Fekecs, Badii Gsib, Hubert Pelletier, Richard Arès, "Full-wafer thermal imaging in ultrahigh epitaxy tools", Proc. SPIE 7750, Photonics North 2010, 77500O (22 September 2010); doi: 10.1117/12.872967; https://doi.org/10.1117/12.872967
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