Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.53 um

Z. J. Jiao; Z. G. Lu; J. R. Liu; P. J. Poole; P. J. Barrios; D, Poitras; X. P. Zhang

doi:10.1117/12.872925

22 September 2010 Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.53 μm

Z. J. Jiao, Z. G. Lu, J. R. Liu, P. J. Poole, P. J. Barrios, D, Poitras, X. P. Zhang

Proceedings Volume 7750, Photonics North 2010; 77501C (2010) https://doi.org/10.1117/12.872925
Event: Photonics North 2010, 2010, Niagara Falls, Canada

Abstract

Linewidth enhancement factor (LEF) of InAs/InP quantum dot (QD) multi-wavelength lasers (MWL) emitting at 1.53 μm are investigated both above and below threshold. Above threshold, LEFs at three different wavelengths around the gain peak by injection locking technique are obtained to be 1.63, 1.37 and 1.59, respectively. Then by Hakki-Paoli method LEF is found to decrease with increased current and shows a value of less than 1 below threshold. These small LEF values have confirmed our InAs/InP QDs are perfect gain materials for laser devices around 1.5 μm.

Citation Download Citation

Z. J. Jiao, Z. G. Lu, J. R. Liu, P. J. Poole, P. J. Barrios, D, Poitras, and X. P. Zhang "Linewidth enhancement factor of InAs/InP quantum dot lasers around 1.53 μm", Proc. SPIE 7750, Photonics North 2010, 77501C (22 September 2010); https://doi.org/10.1117/12.872925

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