22 September 2010 Schottky photodetector integration on LOCOS-defined SOI waveguides
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Proceedings Volume 7750, Photonics North 2010; 77501M (2010) https://doi.org/10.1117/12.873027
Event: Photonics North 2010, 2010, Niagara Falls, Canada
Abstract
Ni/nSi and Pt/nSi Schottky barrier diodes have been integrated with SOI optical waveguides produced using the Local Oxidation of Silicon (LOCOS) technique. The smooth, nearly planar topography provided by LOCOS allows the Schottky metal to overlap the waveguide rib while still giving low leakage current densities (<10-5 Acm-2 for Ni and <10-7 Acm-2 for Pt at 1 V reverse bias). Correcting for input coupling loss, responsivities of 4.7 mA/W and 4 μA/W were obtained for 500 μm long Ni and Pt diodes respectively at 1310 nm. At 1550 nm the responsivity for Ni was 1.8 mA/W while Pt did not give a measureable response.
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Shuxia Li, N. Garry Tarr, Pierre Berini, "Schottky photodetector integration on LOCOS-defined SOI waveguides", Proc. SPIE 7750, Photonics North 2010, 77501M (22 September 2010); doi: 10.1117/12.873027; https://doi.org/10.1117/12.873027
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