14 September 2010 Optical bistability in electrically coupled SOA-BJT devices
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Proceedings Volume 7750, Photonics North 2010; 77501Q (2010) https://doi.org/10.1117/12.871552
Event: Photonics North 2010, 2010, Niagara Falls, Canada
Abstract
A novel optical bistable device based on an electrically coupled semiconductor optical amplifier (SOA) and a bipolar juncture transistor (BJT) is proposed and experimentally demonstrated. The measured switching time is about 0.9-1.0 us, mainly limited by the electrical capacitance of the SOA and the parasitic inductance of the electrical connections. However, the effects of parasitic components can be reduced employing current electronic-photonic integration circuits (EPIC). Numerical simulations confirm that for capacitance values in tens of femtofarads switching speed can reach tens of GHz.
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pablo A. Costanzo-Caso, Pablo A. Costanzo-Caso, Yiye Jin, Yiye Jin, Michael Gehl, Michael Gehl, Sergio Granieri, Sergio Granieri, Azad Siahmakoun, Azad Siahmakoun, } "Optical bistability in electrically coupled SOA-BJT devices", Proc. SPIE 7750, Photonics North 2010, 77501Q (14 September 2010); doi: 10.1117/12.871552; https://doi.org/10.1117/12.871552
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