22 September 2010 Mono-crystalline silicon strips grown by liquid phase epitaxy for photovoltaic applications
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Proceedings Volume 7750, Photonics North 2010; 77502N (2010) https://doi.org/10.1117/12.872895
Event: Photonics North 2010, 2010, Niagara Falls, Canada
Abstract
We have studied epitaxial lateral overgrowth of p-type silicon by Liquid Phase Epitaxy (LPE) on n-type (111) silicon substrates from a Si/In melt. The substrate had a silicon dioxide mask with a set of parallel opening windows for seed lines which were aligned along a [211]direction. The growth parameters, morphology and electrical properties of the grown crystal were studied. Two single crystalline silicon strips were formed on one single seed line, one strip on either side of the seed line, demonstrating that silicon is more likely to deposit near the interface between the silicon and the oxide. All facets of the strips are {111} planes and therefore the bottom surface has a 4 degree angle with the substrate, providing convenience for the epitaxial layer to be peeled off from the substrate and used for potential photovoltaic applications. Monte Carlo random walk model is used to simulate the epitaxial growth of the mono-crystalline strips.
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Bo Li, Bo Li, Adrian H. Kitai, Adrian H. Kitai, } "Mono-crystalline silicon strips grown by liquid phase epitaxy for photovoltaic applications", Proc. SPIE 7750, Photonics North 2010, 77502N (22 September 2010); doi: 10.1117/12.872895; https://doi.org/10.1117/12.872895
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