Room temperature transport measurements on Bridgman-grown CuInSe2 with added sodium

H. F Myers; C. H. Champness; I. Shih

doi:10.1117/12.869576

22 September 2010 Room temperature transport measurements on Bridgman-grown CuInSe₂ with added sodium

H. F Myers, C. H. Champness, I. Shih

Proceedings Volume 7750, Photonics North 2010; 775030 (2010) https://doi.org/10.1117/12.869576
Event: Photonics North 2010, 2010, Niagara Falls, Canada

Abstract

Thermoelectric power, Hall coefficient and resistivity measurements were carried out on material cut from monocrystalline ingots of CuInSe₂. The ingots were grown using a vertical-Bridgman procedure, whereby Cu, In and Se were melted and directionally cooled within a sealed quartz ampoule. When stoichiometric proportions of the starting elements were used, the material was always p-type, with hole concentrations of the order of 10¹⁷-10¹⁸ cm^-3. However, the incorporation of a sufficient amount of sodium (0.3 at. %) into the melt was seen to result in n-type material, with electron concentrations of the order of 10¹⁶. This conversion from p to n was hindered by the inclusion Se above stoichiometry into the ampoule, and more Na was required for the material to change type. The mobility of the p-type samples, with low sodium additions (0-0.2 at. %), was on average 17 cm²V^-1s^-1, and was seen to be higher for material grown from melts containing excess Se, corresponding to the chemical formula CuInSe_2.2, than from stoichiometry. SEM/EDX (Scanning electron microscope / Energy-dispersive X-ray spectroscopy) analysis of the ingots after growth indicated no sodium residing within the interior of the bulk material, but a significant amount was found on the exterior surface in the case of an ingot grown with CuInSe_2.05 and 5 at. % Na. Various deposits found within the ampoules after growth were analyzed, including a copper-rich precipitate found only in ampoules which included a high concentration of Na and a low concentration of excess Se, resulting in n-type material.

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H. F Myers, C. H. Champness, and I. Shih "Room temperature transport measurements on Bridgman-grown CuInSe₂ with added sodium", Proc. SPIE 7750, Photonics North 2010, 775030 (22 September 2010); https://doi.org/10.1117/12.869576

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KEYWORDS

Sodium

Selenium

Copper

Thermoelectric materials

Crystals

Scanning electron microscopy

Quartz

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