22 September 2010 Indium tin oxide and the amorphous-crystalline silicon heterojunction
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Proceedings Volume 7750, Photonics North 2010; 775033 (2010) https://doi.org/10.1117/12.872903
Event: Photonics North 2010, 2010, Niagara Falls, Canada
Abstract
Amorphous silicon-crystalline silicon heterojunctions were prepared using the DC saddle-field plasma enhanced chemical vapour deposition (DCSF-PECVD) technique followed by RF magnetron sputtering of an indium tin oxide (ITO) layer on the nano-thin amorphous film. Depth dependent time of flight secondary ion mass spectrometry (ToF-SIMS) analysis was carried out in order to examine the compositional influence of the sputtered ITO on the underlying amorphous silicon layers. Three samples were analyzed: one, as deposited, a-Si:H/c-Si heterojunction; two, ITO covered a-Si:H/c-Si heterojunction; and three, similar to sample two but now dipped in 10% HCl in order to etch the ITO prior to SIMS analysis. The pre-treatment of the third sample was done to de-couple potential SIMS sputtering-induced implantation of indium, tin, and oxygen in the underlying silicon layers. SIMS analysis shows indium, tin, and oxygen below the surface of the silicon in both the etched and as-deposited samples. AFM analysis of all the samples was also done, indicating that the ITO surface has a high degree of roughness, which could make uniform etching more difficult and could potentially lead to small residual ITO spots on the surface, creating or enhancing the appearance of mixing in the SIMS results for the etched sample.
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Basia Halliop, Basia Halliop, Adel Gougam, Adel Gougam, Nazir P. Kherani, Nazir P. Kherani, Stefan Zukotynski, Stefan Zukotynski, } "Indium tin oxide and the amorphous-crystalline silicon heterojunction", Proc. SPIE 7750, Photonics North 2010, 775033 (22 September 2010); doi: 10.1117/12.872903; https://doi.org/10.1117/12.872903
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