22 September 2010 A low temperature fabrication process utilizing FIB implantation for CMOS compatible photovoltaic cells
Author Affiliations +
Proceedings Volume 7750, Photonics North 2010; 775034 (2010) https://doi.org/10.1117/12.873111
Event: Photonics North 2010, 2010, Niagara Falls, Canada
Abstract
In this article, we present a novel low temperature fabrication process using focused ion beam (FIB) for CMOS compatible photovoltaic cells. Photovoltaic cells are used for scavenging light energy to power CMOS devices and integrating photovoltaic cells on the same CMOS die for self-powering integrated circuits is highly desirable. Integrating such photovoltaic cells as a post-process of the pre-fabricated CMOS die will avoid many complex assembling steps as well as unpredictable interconnect problems. To demonstrate the proof of concept, we have developed low temperature fabrication process to avoid damage to the pre-fabricated CMOS dies. We are also going to introduce focused-ion beam (FIB) as an implantation source to dope silicon wafer for desired concentration. The successfully fabricated demonstration device is tested using a solar simulator. The results obtained from the experimental data indicate that the demonstration device works perfectly as a photovoltaic cell rather with very low efficiency (0.004%).
© (2010) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jasbir N. Patel, Clinton Landrock, Badr Omrane, Bozena Kaminska, Bonnie L. Gray, "A low temperature fabrication process utilizing FIB implantation for CMOS compatible photovoltaic cells", Proc. SPIE 7750, Photonics North 2010, 775034 (22 September 2010); doi: 10.1117/12.873111; https://doi.org/10.1117/12.873111
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Focused Ion Beam Microfabrication
Proceedings of SPIE (June 14 1988)
Laser processing of solar cells
Proceedings of SPIE (October 15 2012)
Si MOSFET Fabrication Using Focused Ion Beams
Proceedings of SPIE (June 18 1984)
Analysis Of Doping Superlattices Grown By Si MBE
Proceedings of SPIE (August 18 1988)

Back to Top