15 November 2010 Carrier dynamics-induced transient photoexcitation and energy deposition in femtosecond-laser irradiated GaAs
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Proceedings Volume 7751, XVIII International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers; 77511J (2010) https://doi.org/10.1117/12.880977
Event: 18th International Symposium on Gas Flow and Chemical Lasers and High Power Lasers, 2010, Sofia, Bulgaria
Abstract
In this work femtosecond laser photo-excitation of GaAs is studied numerically. The transient plasma densities photogenerated during the pumping IR fs-laser pulses were evaluated having in mind experimental data of time-resolved reflectivity measurements of transient bandgap shifts. Theoretical modeling employing quantum kinetic formalism based on a generalized Boltzmann-type equation, including one/multi-photon photo-excitation, Joule heating and free-carrier absorption, interband excitation, impact ionization, Auger recombination of electron-hole plasma, thermal exchange with the lattice, etc. is performed. For the first time the effect of enhancement of ionization by transient bandgap renormalization (BGR) is considered both experimentally and theoretically. The energy spectra of the electron distribution function and the time dependence of the electron density are calculated and the key role of BGR in the transient electron-hole plasma dynamics is pointed out.
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Tzveta Apostolova, Andrey Ionin, Sergey Kudryashov, Leonid Seleznev, Dmitry Sinitsyn, "Carrier dynamics-induced transient photoexcitation and energy deposition in femtosecond-laser irradiated GaAs", Proc. SPIE 7751, XVIII International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, 77511J (15 November 2010); doi: 10.1117/12.880977; https://doi.org/10.1117/12.880977
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