10 September 2010 Negative refractive index in doped semiconductors via electromagnetically induced mixed-parity transitions
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Abstract
The existing Quantum Optics- based models of negative refractive index in atomic-vapor medium (e.g. Ne, Na) require unrealistically strong magnetic response of atoms combined with high atomic density. In contrast to these gas-based models, our approach explores solid-state n-type semiconductor with well-defined hydrogen-like donor atomic states within the band gap. Based on methods of Quantum Optics, we have found that optically transparent indium oxide is negative refractive index material if doped with tin and zinc (In2-x Snx/2 Znx/2 O3 (zinc-doped ITO)). The desirable negative refractive index effect is due to coherent coupling an electric dipole transition with magnetic transition with proper detunings of the probe and support laser beams (A.-G. Kussow and A. Akyurtlu, Int. J. Mod. Physics (2010)). The calculations demonstrate the feasibility of the effect at ~ 10 THz with extremely high figure of merit FOM >> 10.
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Adil-Gerai Kussow, Alkim Akyurtlu, "Negative refractive index in doped semiconductors via electromagnetically induced mixed-parity transitions", Proc. SPIE 7754, Metamaterials: Fundamentals and Applications III, 77541T (10 September 2010); doi: 10.1117/12.859137; https://doi.org/10.1117/12.859137
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