10 September 2010 Study of surface electrical properties of InAlGaAs structures grown on InP substrates
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Abstract
Room temperature photoreflectance (PR) was used to investigate the energy gaps transition, the surface state densities and the surface barrier height of InxAlyGa1-x-yAs, in a series of epitaxial surface intrinsic-n+ structures with different Al concentration. Features of Franz-Keldysh oscillations originating from the built-in electric field in the intrinsic top layer were observed. Based on the thermionic emission theory and current-transport theory, the surface state density can be determined from the square of maximum electric field as a function of various pump beam flux intensities.
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Chung-Chih Chang, Chung-Chih Chang, Ming-Seng Hsu, Ming-Seng Hsu, Yau-Chyr Wang, Yau-Chyr Wang, Wei-Juann Chen, Wei-Juann Chen, Jen-Wei Huang, Jen-Wei Huang, Sih-You Huang, Sih-You Huang, Bo-Han Wang, Bo-Han Wang, Syuan-Hong Chen, Syuan-Hong Chen, "Study of surface electrical properties of InAlGaAs structures grown on InP substrates", Proc. SPIE 7754, Metamaterials: Fundamentals and Applications III, 77542C (10 September 2010); doi: 10.1117/12.860108; https://doi.org/10.1117/12.860108
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