24 August 2010 Epitaxial graphene: dry transfer and materials characterization
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Abstract
Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison graphene grown via most other methods, while also remaining amenable to wafer-scale growth and fabrication. The ability to transfer large area (>mm2), continuous graphene films to arbitrary substrates while maintaining the electrical and structural integrity of the film is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates using thermal release tape both with and without a PMMA backing layer. Van der Pauw devices fabricated from C-face EG that were transferred to SiO2 and sapphire exhibited similar Hall effect mobilities, with an approximate three-fold reduction in carrier density when compared to devices fabricated on as-grown material. Raman spectroscopy illustrated that the optimized transfer process did not adversely affect the material quality, while XPS was used to both determine the transfer efficiency as well as to observe the presence of atomic silicon within the as-grown EG films. This latter observation may provide insight into the identity of the native dopant within these materials and/or a point defect that could be limiting carrier mobility.
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Joshua D. Caldwell, Travis J. Anderson, Karl D. Hobart, Glenn G. Jernigan, James C. Culbertson, Marko J. Tadjer, Fritz J. Kub, Joseph L. Tedesco, Jennifer K. Hite, Michael A. Mastro, Rachael L. Myers-Ward, Charles R. Eddy, Paul M. Campbell, D. Kurt Gaskill, "Epitaxial graphene: dry transfer and materials characterization", Proc. SPIE 7761, Carbon Nanotubes, Graphene, and Associated Devices III, 77610N (24 August 2010); doi: 10.1117/12.860676; https://doi.org/10.1117/12.860676
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