24 August 2010 Dual graphene films growth process based on plasma-assisted chemical vapor deposition
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Graphene has been given great attention to overcome current physical limits in electronic devices and its synthesis routes are developing rapidly. However, graphene film manufacturing is still hindered by either low throughput or low material quality. Here, we present a low temperature PE-CVD assisted graphene growth process on nickel thin films deposited on silicon oxide. Furthermore, our process leads to the formation of two separated graphene films, one at the nickel surface and the other at the Ni/SiO2 interface. A mixture of methane and hydrogen was employed as carbon precursor and activated by DC plasma. We found that the number of graphene layers on top of nickel can be controlled by carbon exposure time, from 1 to around 10 layers. Further annealing process of samples allowed us to achieve improved graphene films by the dissolution and segregation-crystallization process.
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Chang Seok Lee, Chang Seok Lee, Laurent Baraton, Laurent Baraton, Zhanbing He, Zhanbing He, Jean-Luc Maurice, Jean-Luc Maurice, Marc Chaigneau, Marc Chaigneau, Didier Pribat, Didier Pribat, Costel Sorin Cojocaru, Costel Sorin Cojocaru, } "Dual graphene films growth process based on plasma-assisted chemical vapor deposition", Proc. SPIE 7761, Carbon Nanotubes, Graphene, and Associated Devices III, 77610P (24 August 2010); doi: 10.1117/12.861866; https://doi.org/10.1117/12.861866

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