27 August 2010 Photoluminescence study of optically trapped InP semiconductor nanowires
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Abstract
We report on the dynamics of micro-photoluminescence of single InP semiconductor nanowires trapped in a gradient force optical tweezers. Nanowires studied were of zinc blende, wurtzite or mixed phase crystal poly-types and ranged in length from one to ten micrometers. Our results show that the band-edge emission from trapped nanowires exhibits a quenching of the initial intensity with a characteristic time scale of a few seconds and an associated spectral red shift is also observed in the mixed phase nanowires.
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Fan Wang, Fan Wang, Wen Jun Toe, Wen Jun Toe, Suriati Paiman, Suriati Paiman, Qiang Gao, Qiang Gao, Michael Gal, Michael Gal, H. Hoe Tan, H. Hoe Tan, C. Jagadish, C. Jagadish, Peter J. Reece, Peter J. Reece, } "Photoluminescence study of optically trapped InP semiconductor nanowires", Proc. SPIE 7762, Optical Trapping and Optical Micromanipulation VII, 77620R (27 August 2010); doi: 10.1117/12.860236; https://doi.org/10.1117/12.860236
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