23 August 2010 Nanosecond laser ablation and deposition of Ge films
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Abstract
In this work, nanosecond-pulsed from ultra-violet to infrared lasers: KrF (248 nm, 25 ns) and Nd:YAG (1064 nm, 532 nm, 355 nm, 5 ns) were employed for ablation and deposition of germanium films in background pressure of <10-6 Torr. Deposition was carried out at room temperature on Si, GaAs, sapphire and glass. The as-deposited films, characterized by using scanning electron microscopy (SEM) and atomic force microscopy (AFM), consist of nano to micron-sized droplets on nanostructured film. The dependence of film properties on laser wavelengths and fluence are discussed.
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Seong Shan Yap, Wee Ong Siew, Cécile Ladam, Øystein Dahl, Turid Worren Reenaas, Teck Yong Tou, "Nanosecond laser ablation and deposition of Ge films", Proc. SPIE 7766, Nanostructured Thin Films III, 776614 (23 August 2010); doi: 10.1117/12.869014; https://doi.org/10.1117/12.869014
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