Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II
Proceedings Volume 7768 is from: Logo
1-5 August 2010
San Diego, California, United States
Front Matter
Proc. SPIE 7768, Front Matter: Volume 7768, 776801 (21 September 2010);
Nanoheteroepitaxial Growth: Properties and Applications
Proc. SPIE 7768, Catalyst-free GaN nanowire growth and optoelectronic characterization, 776802 (28 August 2010);
Proc. SPIE 7768, Tensile strained III-V self-assembled nanostructures on a (110) surface, 776805 (28 August 2010);
Group IV Nanoepitaxy
Proc. SPIE 7768, Group IV nanomembranes and nanoepitaxy: new properties via local and global strain engineering, 776806 (18 September 2010);
Selective Area Nanoepitaxy and Nanoheteroepitaxy
Proc. SPIE 7768, Dislocation reduction in CdTe epilayers grown on silicon substrates using buffered nanostructures, 77680A (28 August 2010);
Proc. SPIE 7768, Coulomb staircase in fused semiconducting InP nanowires under light illumination, 77680B (28 August 2010);
Nanoepitaxy/Nanoheteroepitaxy: Novel Characterization of Materials and Growth Properties
Proc. SPIE 7768, Temperature-dependent structural characterization of silicon <110> nanowires, 77680H (28 August 2010);
Nanoepitaxial Materials: Applications in Devices and Systems
Proc. SPIE 7768, Epitaxial regrowth of silicon for the fabrication of radial junction nanowire solar cells, 77680I (28 August 2010);
Proc. SPIE 7768, Tuning of the electronic characteristics of ZnO nanowire transistors and their logic device application, 77680J (28 August 2010);
Proc. SPIE 7768, III-nitride nanowires: growth, properties, and applications, 77680K (28 August 2010);
Proc. SPIE 7768, Surface modification of metal and metal coated nanoparticles to induce clustering, 77680L (28 August 2010);
Proc. SPIE 7768, Formation and plasmonic properties of silicon nanowire arrays produced by chemical etching, 77680M (28 August 2010);
Poster Session
Proc. SPIE 7768, In-situ chlorine passivation to suppress surface-dominant transport in silicon nanowire devices, 77680R (28 August 2010);
Proc. SPIE 7768, Growth of metallic nanowires on nanoporous alumina templates: nanocomb structures, 77680S (18 September 2010);
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