28 August 2010 Tensile strained III-V self-assembled nanostructures on a (110) surface
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Abstract
The vast majority of research on epitaxial quantum dots use compressive strain as the driving force for self-assembly on the (001) surface, with InAs/GaAs(001) and Ge/Si(001) being the best-known examples. In this talk, I will discuss our work on determining the feasibility of growing coherent, tensile-strained III-V nanostructures on a (110) surface. GaP on GaAs(110) was chosen as an initial test system. It is hoped that our efforts on self-assembled, tensile-strained dots on a (110) surface will lead the way to new devices exploiting the fundamental differences between the (110) and (001) surfaces. Furthermore it is anticipated that this work will form the first step towards a more general description of self-assembled nanostructure growth under tensile strain.
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Minjoo Larry Lee, Paul J. Simmonds, "Tensile strained III-V self-assembled nanostructures on a (110) surface", Proc. SPIE 7768, Nanoepitaxy: Homo- and Heterogeneous Synthesis, Characterization, and Device Integration of Nanomaterials II, 776805 (28 August 2010); doi: 10.1117/12.860781; https://doi.org/10.1117/12.860781
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KEYWORDS
Lead

Nanostructures

Gallium arsenide

Quantum dots

Homoepitaxy

Silicon

Indium arsenide

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